Herbert Kroemer

Facts

Herbert Kroemer

Photo from the Nobel Foundation archive.

Herbert Kroemer

Born: 25 August 1928, Weimar, Germany

Affiliation at the time of the award: University of California, Santa Barbara, CA, USA

Prize motivation: "for developing semiconductor heterostructures used in high-speed- and opto-electronics."

Prize share: 1/4

Work

Semiconductors, materials with properties between those of electrical conductors and insulators, are the basis for most electronic components. Some components use heterostructures, in which semiconductor materials lie in thin sheets. In 1957 Herbert Kroemer developed a proposal for a transistor built on heterostructures, and in 1963, at the same time as but independently of Zhores Alferov, Herbert Kroemer also built a heterostructure that acted as a laser. These components have since become important in telecommunications, for example

To cite this section
MLA style: Herbert Kroemer – Facts. NobelPrize.org. Nobel Media AB 2018. Fri. 19 Oct 2018. <https://www.nobelprize.org/prizes/physics/2000/kroemer/facts/>

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